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  Datasheet File OCR Text:
 MCC
Features
l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
SD101A THRU SD101C
Small Signal Schottky Diodes
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band
DO-35
Maximum Ratings @ 25oC Unless Otherwise Specified
D
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum sigle cycle surge 10us square wave Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Junction Tmperature Operation/Storage Temp. Range
Symbol VRRM VRWM VR VR(RMS) IFSM Pd R Tj TSTG
SD101A
SD101B
SD101C
60V
50V
40V
A Cathode Mark
42V
35V 2.0A 400mW 300K/W 125 C -55 to +150 C
o o
28V
B
D
C
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic Symbol Max Test Condition Leakage Current SD101A 200nA VR=50V SD101B IR 200nA VR=40V SD101C 200nA VR=30V Maximum Forward SD101A Voltage Drop SD101B SD101C SD101A SD101B SD101C Junction Cap. SD101A SD101B SD101C Reverse Recovery Time 0.41V 0.4V 0.39V I F =1mA I F =15mA 1V 0.95V 0.9V 2.0pF 2.1pF VR=0V, f=1.0MHz 2.2pF IF=IR=50mA, recover to 1ns 200mA/0.1I R
DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40
DIM A B C D
MAX .166 .079 .020 ---
MAX 4.2 2.00 .52 ---
NOTE
VF
Cj trr
Note: 1. Valid provided that electrodes are kept at ambient temperature
www.mccsemi.com
SD101A thru SD101C
Figure 1. Typical variation of forward. current vs.fwd. Voltage for primary conduction through the schottky barrier
mA

MCC
Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring
mA
A A B C B

C
IF

IF


VF Figure 3.Typical variation of reverse current at versus temperature
mA


VF Figure 4. Typical capacitance curve as a function of reverse voltage
mA
A
B
C
IR
IR

VR
VR
www.mccsemi.com


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